| Part Number | 工业/车规级 | Technology | Product status | Package | Polarity | BVDSS(V) | ID(A) | VTH(V) | RDS(ON) @10VTyp | RDS(ON) @4.5VTyp | QG(nC) | PD(W) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NCE60NP2012K | 工业级 | Trench | Production | TO-252 | N+P | -60 | -12 | -1.5 | 84 | 100 | 37.6 | 50 |
The interface is in English. Original catalog and editorial content may be in Chinese.
Overview
NCE60NP2012K · N+P MOSFET,技术参数以原厂资料为准。
Key specifications
| 工业/车规级 | 工业级 |
|---|---|
| Technology | Trench |
| Product status | Production |
| Package | TO-252 |
| Polarity | N+P |
| BVDSS(V) | -60 |
| ID(A) | -12 |
| VTH(V) | -1.5 |
| RDS(ON) @10VTyp | 84 |
| RDS(ON) @4.5VTyp | 100 |
| QG(nC) | 37.6 |
| PD(W) | 50 |
| BVDSS(V)(组2) | 60 |
| ID(A)(组2) | 20 |
| VTH(V)(组2) | 1.6 |
| RDS(ON) @10VTyp(组2) | 24 |
| RDS(ON) @4.5VTyp(组2) | 30 |
| QG(nC)(组2) | 25 |